Cart (Loading....) | Create Account
Close category search window
 

Characterization and modelling of gate current injection in embedded non-volatile flash memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Zaka, A. ; STMicroelectronics, Crolles, France ; Garetto, D. ; Rideau, D. ; Palestri, P.
more authors

Hot Carrier Injection (HCI) is investigated from the experimental and modelling perspectives. Extensive characterization of HCI is performed on flash devices to overcome the difficulties arising from direct gate injection measurements. Furthermore, a semi-analytical approach has been developped, capable of modelling both flash cell's electrostatics during transient operation and gate current under HCI by a non-local model valid for long and short channel devices.

Published in:

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Date of Conference:

4-7 April 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.