By Topic

Decoupling of RTS noise in high density CMOS image sensor using new test structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Jung-Deuk Bok ; Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea ; In-Shik Han ; Hyuk-Min Kwon ; Sang-Uk Park
more authors

In this work, new test structures are proposed to characterize the RTS (Random Telegraph Signal) noise of the CMOS image sensor. The RTS noise of the driver transistor and the source follower transistor, as well as the source follower block itself, are measured using the proposed test structures. The probability of monitoring the RTS noise of the driver transistor and the source follower transistor is 76 % and 52 %, respectively. However, the probability of the generation of the RTS noise for the source follower block is about 74 %. Therefore, it can be said that the driver transistor dominates the RTS noise of the source follower block.

Published in:

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Date of Conference:

4-7 April 2011