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Sensing mobility mismatch due to local interconnect mechanical stress in CMOS technology

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5 Author(s)
Blayac, S. ; CMP/PS2, Ecole des Mines de St. Etienne, Gardanne, France ; Rivero, C. ; Fornara, P. ; Lopez, L.
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For CMOS technology, the increase of interconnects metal density is responsible for heterogeneous mechanical stress fields in active region of silicon. This mismatch originated by interconnects metal lines stress is measured through the use of piezo-resistive test structures. Local mechanical stress can thus be monitored in a simple process control compatible approach.

Published in:

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Date of Conference:

4-7 April 2011