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Single Event Effects test for CMOS devices using 1064nm pulsed laser

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5 Author(s)
Zhifeng Lei ; Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China ; Hongwei Luo ; Hui Chen ; Qian Shi
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Presently one challenge facing electronics operating in outer space is that trapped protons and electrons from Earth's radiation belts and cosmic rays may cause semiconductor devices material ionization during which extra ionized charges inside the device in one single node accumulate to the threshold and SEE (Single Event Effects) occurred, even causing device burned. This paper illustrate the new method of SEE testing using pulsed laser, from which pulsed laser automatic scanning experiment was used to SEE research of DDS (Direct Digital Synthesizer), and SEL (Single event Latch-up), SEFI (Single Event function interruption), and Large frequency jitters had observed in chip scanning process. It is concluded that pulsed laser is a valid supplement for heavy ion accelerator in the test of SEE, and also can testify single event phenomenon in device quickly and help positioning sensitive nodes.

Published in:

Quality, Reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE), 2011 International Conference on

Date of Conference:

17-19 June 2011

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