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High-Gain Silicon On-Chip Antenna With Artificial Dielectric Layer

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2 Author(s)
Takahagi, Kazuhiro ; Res. center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan ; Sano, E.

On-chip antennas are demanded to further lower the cost of wireless CMOS ICs. The low resistivity of silicon substrates is a major obstacle to fabricate high-gain on-chip antennas. We placed an artificial dielectric layer (ADL) between an antenna and Si substrate to improve the antenna gain. A half-wave dipole-antenna that has ADL was designed and fabricated using a CMOS-compatible process with one poly-Si and two metal layers. Using the ADL enhanced gain by 3-dB. The measured gain was the highest ever achieved for the antennas operating at around 10 GHz on low-resistivity Si substrates. A method for further improvement is discussed.

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Antennas and Propagation, IEEE Transactions on  (Volume:59 ,  Issue: 10 )