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A new electrostatic focusing Spindt-type field emitter array (FEA) was simulated and fabricated to develop a compact FEA image sensor with a high-gain avalanche rushing amorphous photoconductor target. Although the conventional double-gated FEAs can generate focused electron beams by applying a lower voltage to the focusing electrode (second gate) than that of the gate electrode, the emission current drastically decreases. These experimental results show that by increasing the thickness of the gate electrode the emission current can be improved without deterioration of the focusing characteristics.