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Room temperature spin relaxation length in spin light-emitting diodes

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11 Author(s)
Soldat, Henning ; Lehrstuhl für Photonik und Terahertztechnologie, Ruhr-Universität Bochum, D-44801 Bochum, Germany ; Li, Mingyuan ; Gerhardt, N.C. ; Hofmann, M.R.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3622662 

We investigate the spin relaxation length in GaAs spin light-emitting diode devices under drift transport at room temperature. The spin-polarised electrons are injected through a MgO tunnel barrier from a Fe/Tb multilayer in magnetic remanence. The decrease in circular polarization with increasing injection path length is investigated and found to be exponential, supporting drift-based transport. The spin relaxation length in our samples is 26 nm, and a lower bound for the spin injection efficiency at the spin injector/GaAs interface is estimated to be 25 ± 2%.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 5 )

Date of Publication:

Aug 2011

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