Referenced Items are not available for this document.
This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based high-electron mobility transistors (HEMTs). The presented method is based on pulsed ID-VG measurements and electroluminescence characterization and provides a rapid and effective evaluation of the following: 1) the presence of traps in the region under the gate; 2) trapping phenomena occurring in the gate-drain access region; 3) the role of traps in limiting the maximum gate-drain electric field and the equivalent electron temperature. The method is validated by means of a split-wafer experiment carried out on GaN-based HEMTs with different gate materials with and without passivation.
Published in:
Electron Devices, IEEE Transactions on
(Volume:58
,
Issue:
9
)
Date of Publication: Sept. 2011
- Page(s):
- 2996 - 3003
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 12190292
- Digital Object Identifier :
- 10.1109/TED.2011.2160547
- Product Type:
- Journals & Magazines
- Date of Publication :
- 04 August 2011
- Date of Current Version :
- 22 August 2011
- Issue Date :
- Sept. 2011
- Sponsored by :
- IEEE Electron Devices Society
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