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A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

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9 Author(s)
Richard Al Hadi ; IHCT, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119, Germany ; Hani Sherry ; Janusz Grzyb ; Neda Baktash
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This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7-15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/√Hz and a responsivity (Rv) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.

Published in:

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Date of Conference:

5-10 June 2011