By Topic

A low-noise CMOS instrumentation amplifier for thermoelectric infrared detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
C. Menolfi ; Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland ; Qiuting Huang

A low-noise CMOS instrumentation amplifier for low-frequency thermoelectric infrared sensor applications is described which uses a chopper technique to reduce low-frequency noise and offset. The offset reduction efficiency of the band-pass filter, implemented to reduce residual offset due to clock feedthrough, has been analyzed and experimentally verified. The circuit has been integrated in a transistor-only 1-μm single-poly n-well CMOS process. It features a gain of 52 dB with a 500 Hz bandwidth and a common-mode rejection ratio (CMRR) of more than 70 dB. The equivalent input low frequency noise is 15 nV/√Hz. The typical residual input offset is 1.5 μV. The amplifier power consumption is 1.3 mW

Published in:

IEEE Journal of Solid-State Circuits  (Volume:32 ,  Issue: 7 )