By Topic

Miniature RF MEMS metal-contact switches for DC-20 GHz applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Stefanini, R. ; XLIM, Univ. de Limoges, Albert, France ; Chatras, M. ; Blondy, P. ; Rebeiz, G.M.

This paper presents the design and measurements of a miniature RF MEMS (Micro-Electro-Mechanical System) metal-contact switch. The dimensions (25×24 × 1.6 μm) and shape of the beam and actuation pad have been optimized to result in a 12-25 μN contact force at 52-60 V actuation, with a corresponding restoring force of 15 μN. Measured S-parameters on a single switch show an up-state capacitance of 5 fF and a 13-14 Ω contact resistance for a Au-Ru contact under an actuation voltage of 55 V. In order to reduce the effective switch resistance, 10 miniature RF MEMS switches have been placed in parallel and result in an up-state capacitance of 30 fF and a switch resistance of 1.4 Ω. The measured switching time is 2.2 μs and the release time is <;1 μs. The switch is robust to stress effects (residual and stress gradients) which increases its yield on large wafers. To our knowledge, this is the first demonstration of a miniature RF-MEMS metal-contact switch and with an excellent figure-of-merit (fc=1/(2.π.Ron.Cu)=3.8 THz).

Published in:

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Date of Conference:

5-10 June 2011