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Co-design of power amplifier and narrowband filter using high-Q evanescent-mode cavity resonator as the output matching network

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4 Author(s)
Kenle Chen ; School of Electrical and Computer Engineering, Birck Nano Technology Center, Purdue University, USA ; Xiaoguang Liu ; William J. Chappell ; Dimitrios Peroulis

A unique GaN power amplifier (PA) with an integrated evanescent-mode resonator as its output matching network is presented in this paper. Instead of matching the output of the GaN transistor to 50 Ω and connecting it to a 50-Ω bandpass filter, the GaN is directly integrated with a one-pole filter thus eliminating the conventionally-employed output matching network after the GaN transistor. This leads to a reduced circuit complexity and higher efficiency. The one-pole filter implemented by a strongly-coupled evanescent-mode cavity resonator with an unloaded quality factor of 320 is experimentally presented as a proof-of-concept demonstration. This design yields a very narrowband PA response from 1.24-1.275 GHz (2.8%), which is comparable to the bandwidth of typical communication signals. The PA exhibits a state-of-the-art performance of >; 70% efficiency, >; 10 dB gain, >; 30 dBm output power, and second and third harmonic levels of <; -70 dBc. The presented methodology has the potential to be further extended to a tunable design for multi-band applications.

Published in:

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Date of Conference:

5-10 June 2011