Referenced Items are not available for this document.
This paper describes techniques for the design of high-resolution oversampling analog-to-digital converters based on current memories. A key point is the reduction of nonlinearities, in particular those introduced by the current switches. A current-memory cell with very high precision and linearity has been designed and used in an experimental third-order Σ-δ modulator in a 0.8-μm digital CMOS process. A linearity of better than 14 b and a maximum signal-to-noise+distortion ratio (SNDR) of 80 dB has been measured for an oversampling ratio (OSR) of 64
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:32
,
Issue:
7
)
Date of Publication: Jul 1997
- Page(s):
- 953 - 958
- ISSN :
- 0018-9200
- INSPEC Accession Number:
- 5640099
- Digital Object Identifier :
- 10.1109/4.597285
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jul 1997
- Sponsored by :
- IEEE Solid-State Circuits Society
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