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A 5.9-to-7.8 GHz VCO in 65 nm CMOS using high-Q inductor in an embedded Wafer Level BGA package

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6 Author(s)
Issakov, V. ; Infineon Technol. AG, Neubiberg, Germany ; Wojnowski, M. ; Knoblinger, G. ; Fulde, M.
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We present a 5.9-to-7.8 GHz voltage-controlled oscillator (VCO) fabricated in a 65 nm CMOS technology and assembled in a chip-scale embedded Wafer Level Ball-Grid-Array (eWLB) package. The VCO uses a high-quality LC-tank inductor, realized in the fan-out area of the package. This inductor achieves a quality factor of 28 at a frequency of 6.5 GHz. Using this high-Q inductor it was possible to reduce the phase noise by as much as 9 dB at a carrier offset of 1 MHz compared to a reference VCO, which is identical to the first one, but uses an integrated on-chip inductor instead. The VCO using the embedded eWLB inductor offers a phase noise of -118.3 dBc/Hz at 1 MHz and achieves an output power of -1.1 dBm. The VCO core consumes 20.2 mA from a 1.2 V supply. The presented results demonstrate an excellent potential for embedded inductors in the fan-out area of an eWLB package for circuits requiring high-Q inductors.

Published in:

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Date of Conference:

5-10 June 2011

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