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A simple method to determine the power dissipation dependent thermal resistance and the junction temperature of a power AlGaN/GaN HEMT proposed. The method is based on a rigorous mathematical treatment of the nonlinear characteristics of thermal resistance. It is hence suitable for modeling of transistors operating at any power densities. This method has been verified by an accurate predicting of junction temperature of an 8×80μm×0.3μm AlGaN/GaN HEMT, fabricated with an in-house AlGaN/GaN HEMTs technology.