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A 4″ wafer photostepper-based carbon nanotube FET technology for RF applications

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11 Author(s)
M. Schroter ; RFNano Corp., 4311 Jamboree Rd., Newport Beach, CA 92660, USA ; P. Kolev ; D. Wang ; M. Eron
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Depletion-mode CNTFETs have been fabricated on 4" wafers with a photostepper-based process. The transistors show significant current and power gain with peak (fT, fmax) values of (9, 10) GHz. Compact model results are compared to experimental characteristics over bias and frequency. First RF amplifier circuit results are also shown.

Published in:

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Date of Conference:

5-10 June 2011