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Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators

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5 Author(s)
Vorobiev, A. ; Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden ; Berge, J. ; Gevorgian, S. ; Loffler, M.
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Tunable 5.2 GHz bulk acoustic wave resonators utilizing BaxSr1-xTiO3 ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO2-x in the Pt layer.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 2 )

Date of Publication:

Jul 2011

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