DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the
V
_TH
shift of the (
N
+ 2)th erased state cell is larger than that of the (
N
+ 1)th erased state cell if it is assumed that the channel of the
N
th cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.