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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

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8 Author(s)
Chu, L.K. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan ; Merckling, C. ; Alian, A. ; Dekoster, J.
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We investigated the passivation of In0.53Ga0.47As (001) surface by molecular beam epitaxy techniques. After growth of strained In0.53Ga0.47As on InP (001) substrate, HfO2/Al2O3 high-κ oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (Dit) of the Al2O3/In0.53Ga0.47As interface have been revealed by conductance measurement, indicating a downward Dit profile from the energy close to the valence band (medium 1012 cm-2eV-1) towards that close to the conduction band (1011 cm-2eV-1). The low Dit’s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO2 has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO2 thickness (dielectric constant of HfO2 ∼20) and the remained low Dit’s due to the thin Al2O3 passivation layer. The sample with HfO2 (3.4 nm)/Al2O3 (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of ∼0.93 nm.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 4 )

Date of Publication:

Jul 2011

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