By Topic

Feasibility study of plasma doping using B2H6 and PH3 for shallow junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Genshu Fuse ; SEN Corporation, 1501 Imazaike, Saijo, Ehime, 799-1362, Japan ; Masaru Tanaka ; Hiroki Murooka ; Masashi Kuriyama
more authors

Several features of plasma doping (PD) are discussed. First, the performance of PD is compared to conventional ion implantation for characteristics such as dose uniformity, repeatability, particles, metal contamination, photo-resist (PR) removal and charging performance. The numerical results are as follows: (1) doping uniformity of boron and phosphorous is about 1.5% and 1%, respectively, within a 300-mm wafer and using practical throughput. (2) Particles is more than three per wafer at 0.15μm or larger during a 2,000 wafer test run. (3) Metal contamination is below 1E10/cm2 for all of the major metals including aluminum. Secondly, we discovered a means to eliminate dimples normally created during anneal of He-based PD. Finally, we found a mechanism whereby helium atoms physically drive boron and phosphorous atoms more deeply into the silicon substrate. The mechanism is quite different from conventional ion implantation and enhances abruptness of dopant depth profiles. Thus, we concluded that this type of PD system is a leading candidate for doping at the 22nm node and beyond as well as for 450-mm wafer fabrication.

Published in:

Junction Technology (IWJT), 2011 11th International Workshop on

Date of Conference:

9-10 June 2011