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High mobility material channel CMOS technologies based on heterogeneous integration

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2 Author(s)
Takagi, S. ; Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan ; Takenaka, M.

CMOS family utilizing III-V/Ge channels on Si substrates can be key devices for high performance and low power advanced LSIs in the future. The critical issues and the key technologies for realizing Ge/III-V-based channel MOSFETs on the Si platform have been addressed. While there are still several critical issues to be solved, recent progresses on the MOS interface control technologies, the Ge/III-V thin body channel formation techniques, the mobility booster technologies including surface orientation engineering and the S/D junction technologies on Ge MOSFETs are making Ge/III-V channel MOSFETs more promising for future applications to high performance and low power advanced LSIs. As a result, we can conclude that ultrathin-body-based Ge/III-V MOSFETs on the Si CMOS platform can be a strong candidate as the device structures under the 15 nm technology node and beyond.

Published in:

Junction Technology (IWJT), 2011 11th International Workshop on

Date of Conference:

9-10 June 2011