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For the first time, self-aligned suspended-body carbon nanotube field-effect-transistors (CNTFETs) with efficient and independent electrostatic control by two laterally placed independent gates spaced less than 100 nm away from the CNT channel have been demonstrated. A precise positioning method using resist trenches is used for their fabrication. A superior control of I-V characteristics by two lateral gates is experimentally found and studied. The proposed double-gate suspended-body CNTFETs hold promise for bottom-up fabrication of resonant NEMS devices, such as tunable/switchable resonators for sensing and radio-frequency (RF) applications.