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Low temperature Pyrex/silicon wafer bonding via a single intermediate parylene layer

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2 Author(s)
Ciftlik, A.T. ; Lab. of Microsyst., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland ; Gijs, M.A.M.

We introduce a new low temperature (280°C) parylene-C wafer bonding technique, where parylene-C bonds directly a Pyrex wafer to a silicon wafer with either a Si, SiO2 or Si3N4 surface with a bonding strength up to 23 MPa. The technique uses a single layer of parylene-C deposited only on the Pyrex wafer. Moreover, the process is compatible for bonding any type of wafer with small-sized micropatterned features, or containing microfluidic channels and electrodes. This technique can be an alternative for conventional bonding methods like anodic bonding in applications requiring a low temperature and diverse bonding interfaces.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Date of Conference:

5-9 June 2011