Referenced Items are not available for this document.
In this letter, a new technique based on gated-four-probe hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) structure is proposed. This new technique allows the determination of the intrinsic performance of a-Si:H TFT without any influence from source/drain series resistances. In this method, two probes within a conventional a-Si:H TFT are used to measure the voltage difference within a channel. By correlating this voltage difference with the drain-source current induced by applied gate bias, the a-Si:H TFT intrinsic performance, such as mobility, threshold voltage, and field-effect conductance activation energy, can be accurately determined without any influence from source/drain series resistances.
Published in:
Electron Device Letters, IEEE
(Volume:18
,
Issue:
7
)
Date of Publication: July 1997
- Page(s):
- 340 - 342
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5633215
- Digital Object Identifier :
- 10.1109/55.596930
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- July 1997
- Sponsored by :
- IEEE Electron Devices Society
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