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A new DC Drain-Current-Conductance method (DCCM) for the characterization of effective mobility (μ/sub eff/) and series resistances (R/sub s/, R/sub d/) of fresh and hot-carrier stressed graded junction MOSFETs

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4 Author(s)
Lou, C.L. ; Fac. of Eng., Nat. Univ. of Singapore, Singapore ; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.

A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (u/sub eff/) and series resistances (R/sub s/ and R/sub d/) of graded junction n- and p-channel MOSFETs. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFETs and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFETs.

Published in:

Electron Device Letters, IEEE  (Volume:18 ,  Issue: 7 )

Date of Publication:

July 1997

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