By Topic

Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
L. Shi ; Delft University of Technology, the Netherlands ; L. K. Nanver ; C. Laubis ; F. Scholze
more authors

Ultrashallow Si p+n photodiodes fabricated in a pure-boron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity.

Published in:

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Date of Conference:

5-9 June 2011