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GaAs/InxGa1−xAs/GaAs/AlAs resonant tunneling diodes for novel MEMS gyroscope application

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6 Author(s)
Lishuang Liu ; Nat. Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan, China ; Jun Liu ; Yunbo Shi ; Ruirong Wang
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GaAs/InxGa1-xAs/GaAs/AlAs double barrier resonant tunneling diodes (RTDs) are designed as the stress gauge element for the gyroscope application, which is based on their meso-pizeoresistive effect. The RTD with double air-bridges is fabricated using molecular beam epitaxy (MBE) and GaAs surface micromaching technology. Raman spectroscopy is used for the stress measurements. Combining the stress measurement and the RTD I-V characterization, it is concluded that the valley point in negative resistance area has the highest sensitivity reaching up to 1.03 × 10-4V/MPa. The GaAS based gyroscope is designed and fabricated. According to the test results, the angler of gyroscope measurement range of ±500°/s, that has a sensitivity of 9.35μV/°/s and linearity of 0.99259.

Published in:

Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International

Date of Conference:

5-9 June 2011

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