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Y-junction power divider in InGaAsP-InP photonic integrated circuits

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7 Author(s)
Liou, K.-Y. ; AT&T Bell Lab., Holmdel, NJ, USA ; Koren, U. ; Burrows, E.C. ; Young, M.
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A demonstration is presented of an InGaAsP-InP asymmetric waveguide Y junction with a power dividing ratio which is independent of the polarization of the input light. The Y junction is monolithically integrated with an active optical gain section by metalorganic chemical vapor deposition (MOCVD). The integrated chip represents a fundamental building block for photonic integrated circuits. Experimental results are in agreement with a theoretical analysis of the Y junction. The theory shows a low radiation loss (0.4 dB) and negligible power reflection (-63 dB) at the Y junction, which is ideal for monolithic integration with active devices. They also report on an integrated optical amplifier Y-junction-monitoring detector chip as an example of a photonic integrated circuit that employs the new Y-junction design. The estimated excess loss of the Y junction was 1.4 dB for the integrated chip, and the Y-junction reflectivity was found to be negligible

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Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 8 )