By Topic

The effect of electronic feedback on semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Sharaf, K. ; Dept. of Electron. & Comput. Eng., Ain Shams Univ., Cairo, Egypt ; Ibrahim, M.

Negative electronic feedback (EFB) has a strong effect on the performance of a bistable laser diode amplifier and on injection-locked lasers. Negative EFB drastically reduces the switching-up input power level and the hysteresis in the input-output power characteristic and in the tuning curves of the bistable laser amplifier. Furthermore, negative EFB leads to a reduction in the time delay associated with optical switching in diode laser amplifiers. This provides a means of enhancing the versatility of the proposed system in some potential applications. For an injected-locked laser, negative EFB achieves a broadening in the locking bandwidth and its dynamically stable region

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 8 )