By Topic

Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Dong Han Kang ; Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea ; In Kang ; Sang Hyun Ryu ; Jin Jang

We report a self-aligned coplanar amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) using an a-IGZO/SiO2 stack layer. From the channel-length dependence of the total resistance for the TFTs, the channel and parasitic resistances were found to be 8.4 kΩ/μm and 9.7 kΩ/sq, respectively. The fabricated a-IGZO TFT exhibits field-effect mobility of 23.3 cm2/V ·s, threshold voltage of 3.6 V, and gate voltage swing of 203 mV/dec. A 23-stage ring oscillator made of the self-aligned TFTs exhibits a propagation delay time of 17 ns/stage at a supply voltage of 22 V.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 10 )