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A novel sub-1-V bandgap reference in 0.18µm CMOS technology

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3 Author(s)
Min Tan ; Analog Integrated Circuit Design Dept., CETC, Chongqing, China ; Fan Liu ; Fei Xiang

A sub-1-V bandgap reference in 0.18 μ m CMOS technology is introduced in this paper. A novel start-up circuitry and a novel low voltage amplifier are the enabling techniques for this design. The startup circuit consumes negligible power, yet guarantees the desired operating point of the bandgap reference. Transistors operating in sub-threshold region are used to enable sub-1-v operation of the low voltage amplifier. Unlike existing designs, the proposed amplifier can be implemented in CMOS technology with threshold voltage less than one VEB(on). The proposed sub-1-V bandgap reference is simulated in standard 0.18um CMOS technology. The maximum total current consumption is only 10.3uA and a temperature coefficient of 4.1ppm/°C can be achieved at 1.2V supply voltage. The minimum supply voltage is only 0.8V.

Published in:

Anti-Counterfeiting, Security and Identification (ASID), 2011 IEEE International Conference on

Date of Conference:

24-26 June 2011