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A Finite-Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells

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3 Author(s)
Vergura, S. ; Dept. of Electrotechnics, Electron. of Politec. di Bari, Bari, Italy ; Acciani, G. ; Falcone, O.

The paper introduces the issue of the typical defects in photovoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole, and conductive intrusion. These defects are modeled by means of finite-element method and implemented in Comsol Multiphysics environment to analyze the temperature distribution in the whole defected PV cell. All the three typologies of silicon-based PV cells are considered: monocrystalline, polycrystalline, and amorphous. Numerical issues (simulation times, degrees of freedom, mesh elements, and grid dependence analysis) are reported.

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Industrial Electronics, IEEE Transactions on  (Volume:59 ,  Issue: 10 )