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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

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8 Author(s)
Reggiani, S. ; Adv. Res. Center for Electron. Syst. “E. De Castro”, Univ. of Bologna, Bologna, Italy ; Poli, S. ; Denison, M. ; Gnani, E.
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A physics-based analytical model for the on-resistance in the linear transport regime and its application as an alternative tool for the investigation of the hot-carrier stress degradation in shallow-trench-isolation-based laterally diffused MOS devices are presented. The extraction of the model and its validation by comparison with experimental and TCAD data are reported. A thorough investigation of the degradation under low- and high-gate stress biases, corresponding to saturation and impact-ionization regimes, is carried out to gain an insight on the overall bias and temperature dependences of the parameter drifts.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 9 )