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Thermal characteristics of AlGaInP thin-film LED with transparent conducting ITO p-type contact by electrical method are presented and discussed . Samples without ITO fabricated from the same AlGaInP /GaAs epitaxial material are also prepared as references . The temperature coefficients of the samples are measured firstly and they are used as temperature sensitive parameters to determine the temperature rise . Heating response curves show that the temperature of chip in the sample with ITO is about 9K lower than the sample without ITO when the time of applying 60mA operation current exceeds 105 μs. It can be also calculated that thermal resistance(from chip to ambient condition) of the sample with ITO is about 40K/W lower than the one without ITO. Finally we make the conclusion that the ITO layer is helpful for the thermal management of LED and it can improve the reliability the AlGaInP thin-film LED effectively.