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Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

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7 Author(s)
Chen, T.R. ; Univ. of Electron. Sci. & Technol., China ; Eng, L. ; Zhao, B. ; Zhuang, Y.H.
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Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced

Published in:

Quantum Electronics, IEEE Journal of  (Volume:26 ,  Issue: 7 )

Date of Publication:

Jul 1990

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