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A 155-GHz monolithic InP-based HEMT amplifier

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10 Author(s)
H. Wang ; TRW Space & Electron. Group, Redondo Beach, CA, USA ; R. Lai ; Y. C. Chen ; Y. L. Kok
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This paper presents the development, of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1-/spl mu/m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 153-155 GHz, and more than 10-dB gain from 151 to 156 GHz. This is the highest frequency amplifier ever reported using three terminal devices.

Published in:

Microwave Symposium Digest, 1997., IEEE MTT-S International  (Volume:3 )

Date of Conference:

8-13 June 1997