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A 94 GHz monolithic high output power amplifier

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9 Author(s)
Huang, P. ; TRW Electron. Syst. & Technol. Div., Redondo Beach, CA, USA ; Lin, E. ; Lai, R. ; Biedenbender, M.
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A two-stage monolithic W-band power amplifier using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300 mW with 10.5% peak power-added efficiency at 94 GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.

Published in:

Microwave Symposium Digest, 1997., IEEE MTT-S International  (Volume:3 )

Date of Conference:

8-13 June 1997

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