Skip to Main Content
A two-stage monolithic W-band power amplifier using 0.1-/spl mu/m pseudomorphic AlGaAs/InGaAs/GaAs T-gate power HEMT process has been designed, fabricated, and tested. This MMIC PA exhibits 8 dB linear gain and a maximum output power of 300 mW with 10.5% peak power-added efficiency at 94 GHz. The substrate thickness is 2 mil to take advantage of lower thermal resistance as well as smaller via holes and a more compact chip layout. To our knowledge, the 300-mW output power represents the highest output power for a single W-band power amplifier chip at this frequency.
Microwave Symposium Digest, 1997., IEEE MTT-S International (Volume:3 )
Date of Conference: 8-13 June 1997