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We report results of comprehensive 2-D simulation evaluation of the first MOS-controlled thyristor structure employing the super junction concept on a 1.2-kV field stop structure. In comparison to a standard device, simultaneous reduction in Vce(sat) and Eoff can be achieved in a super junction trench clustered insulated gate bipolar transistor (SJ-TCIGBT). The simulation results show that up to 80% reduction in Eoff is possible. Unlike the super junction insulated gate bipolar transistors, there is no significant increase in the saturation current with the anode voltage or the depth of the pillars. SJ-TCIGBT is a highly promising next generation device concept with record-breaking Vce(sat)-Eoff tradeoff enhancement to improve converter efficiency.