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Free-Standing GaN-Based Photonic Crystal Band-Edge Laser

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5 Author(s)
Dong-Uk Kim ; Dept. of Phys. & Astron., Seoul Nat. Univ., Seoul, South Korea ; Sunghwan Kim ; Jeongkug Lee ; Seong-Ran Jeon
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We report the fabrication of a GaN-based membrane-type photonic crystal (PC) band-edge laser (BEL) that requires a smaller PC active area than previous designs due to strong field confinement. A honeycomb-lattice PC was designed such that the Γ1 monopole band-edge mode fell within the emission band of InGaN quantum wells. The BEL exhibited pulsed lasing at room-temperature when optically pumped above its threshold pump energy density of ~ 15.5 mJ/cm2. Based on polarization angle analysis, we confirmed that the BEL indeed lased at the Γ1 monopole band-edge mode.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 20 )