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10-Gb/s Ge/SiGe Multiple Quantum-Well Waveguide Photodetector

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10 Author(s)
Chaisakul, P. ; CNRS, Univ. Paris-Sud, Orsay, France ; Marris-Morini, D. ; Isella, G. ; Chrastina, D.
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The authors report on high speed operation of a Ge/SiGe multiple quantum-well waveguide photodetector. At -3 V, 10 Gb/s operation is demonstrated at wavelengths of 1405 and 1420 nm with a responsivity as high as 0.8 A/W. The device, 3 μm wide and 80 μm long, exhibits a dark current of 474 nA at a reverse bias of -1 V. These results pave the way for the use of Ge/SiGe multiple quantum-well structures as efficient active waveguide devices in silicon compatible integrated circuits.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 20 )

Date of Publication:

Oct.15, 2011

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