Tunneling source-body contact for partially-depleted SOI MOSFET

In this paper, a novel self-aligned asymmetric source-body contact is proposed based on the tunneling effect. The fabrication is relatively simple with only one extra angle implant step. Test structures have been fabricated and good electrical results were obtained. The improvements of this new approach in both device performance and manufacturing compared to fully-depleted SOI MOSFETs are discussed.