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Fabrication of ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance using pattern-constrained epitaxy

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5 Author(s)
Hon-Sum Wong ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Chan, Kevin K. ; Lee, Y. ; Roper, P.
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We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 μm effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rsd/=333 Ω·μm) were obtained

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 7 )