Referenced Items are not available for this document.
We report a novel fabrication process for self-aligned, ultrathin, highly uniform thin-film SOI MOSFETs with low series resistance. Self-aligned, ultrathin SOI n-MOSFETs with 8 nm-50 nm undoped channel were fabricated. For n-MOSFETs with a 0.2 μm effective channel length, a saturation transconductance of 242 mS/mm, and a low series resistance (Rsd/=333 Ω·μm) were obtained
Published in:
Electron Devices, IEEE Transactions on
(Volume:44
,
Issue:
7
)
Date of Publication: Jul 1997
- Page(s):
- 1131 - 1135
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5625582
- Digital Object Identifier :
- 10.1109/16.595941
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jul 1997
- Sponsored by :
- IEEE Electron Devices Society
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