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CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics

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3 Author(s)
Beck, D. ; Stuttgart Univ., Germany ; Herrmann, M. ; Kasper, E.

The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ). A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 Ω·cm) and standard CMOS substrates (CZ, n-type, 4-6 Ω·cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs

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Electron Devices, IEEE Transactions on  (Volume:44 ,  Issue: 7 )