CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics

The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ). A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 /spl Omega//spl middot/cm) and standard CMOS substrates (CZ, n-type, 4-6 /spl Omega//spl middot/cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs.