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Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

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10 Author(s)
Yum, J.H. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA ; Akyol, T. ; Lei, M. ; Ferrer, D.A.
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We present results on n-channel inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic layer deposited (ALD) beryllium oxide (BeO) gate dielectric using the gate-last process. InP MOSFETs with the BeO gate stack were realized with high performance including the improved drive current, subthreshold swing, and a peak effective electron mobility. The transmission electron microscopy and x-ray photoemission spectroscopy measurements demonstrate an interface between BeO and InP substrates with high quality and efficient thermal stability. The use of ALD BeO as a gate dielectric may be a potential solution for future III-V MOS device fabrication.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 3 )

Date of Publication:

Jul 2011

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