By Topic

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Yum, J.H. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA ; Akyol, T. ; Lei, M. ; Ferrer, D.A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We present results on n-channel inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic layer deposited (ALD) beryllium oxide (BeO) gate dielectric using the gate-last process. InP MOSFETs with the BeO gate stack were realized with high performance including the improved drive current, subthreshold swing, and a peak effective electron mobility. The transmission electron microscopy and x-ray photoemission spectroscopy measurements demonstrate an interface between BeO and InP substrates with high quality and efficient thermal stability. The use of ALD BeO as a gate dielectric may be a potential solution for future III-V MOS device fabrication.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 3 )