By Topic

Effects of cobalt doping concentration on the structural, electrical, and optical properties of titanium dioxide thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Musa, M.Z. ; NANO Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia ; Ameran, Z.F. ; Mamat, M.H. ; Malek, M.F.
more authors

Cobalt-doped titanium dioxide thin films have been successfully deposited using sol-gel spin coating technique. The doping process has been done by mixing cobalt source into TiO2 sol-gel. The doping concentration has been varied and its effects to the structural, electrical, and optical properties of the thin films have been studied. Reduction in electrical resistivity is observed with the increase of cobalt doping concentration. Higher cobalt doping concentration sample also shows a shift of absorption edge to longer wavelength which is a desired characteristic for application in optoelectronic devices.

Published in:

Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on

Date of Conference:

25-27 April 2011