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We study recombination properties and the formation of base contacts, which are realized by local laser ablation of a dielectric stack and the subsequent full-area screen printing of an Al paste. Based on charge-carrier lifetime measurements using the camera-based calibration-free dynamic infrared lifetime mapping technique, we determine contact reverse saturation current densities as low as J0, cont = 9 X102 fA/cm2 on 1.5-Ωcmp-type float-zone silicon (FZ-Si) and J0, cont = 2X104 fA/cm2 on 200- Ωcmp-type FZ-Si. Scanning electron microscopy images reveal that the thickness of the highly Al-doped (Al-p+) layer considerably depends on the contact size and the contact layout (e.g., point or line contacts). Based on this finding, we show that Al-p+ layer thickness WAl-p+ significantly affects the contact recombination. As a result, we show which local contact geometry is most appropriate for the lowest contact recombination employing local Al-alloyed contacts.