By Topic

Investigations of Novel \Gamma -Gate MOS-HEMTs by Ozone Water Oxidation and Shifted Exposure Techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ching-Sung Lee ; Department of Electronic Engineering, Feng Chia University, Taichung, Taiwan ; Bo-Yi Chou ; Sheng-Han Yang ; Wei-Chou Hsu
more authors

A novel Γ-gate Al0.24Ga0.76As/In0.15Ga0.85As metal-oxide-semiconductor (MOS) high-electron-mobility transistor (MOS-HEMT) by using methods of ozone water oxidation and shifted exposure has been comprehensively investigated. Effective gate-length reduction, improved gate insulation, and formations of a field plate and a full surface passivation within the drain-source region are simultaneously achieved. The present Γ-gate MOS-HEMT has demonstrated superior device performances, including improvements of 523% (12.8%) in two-terminal gate-drain breakdown, 137% (36.1%) in on-state drain-source breakdown, 16.1% (11.8%) in maximum extrinsic transconductance (gm, max), 34.5% (9.7%) in intrinsic voltage gain (AV), 27.8% (16.2%) in power-added efficiency, 34.5% (19.8%) in minimum noise figure (NFmin) , and 28%/39.3% (11.4%/21.6%) in unity-gain cutoff frequency/maximum oscillation frequency (fT/fmax), as compared to a conventional Schottky-gate (MOS-gate) device fabricated upon the same epitaxial structure by using an identical optical mask set. Investigations of optimum extracted parasitics, small-signal device parameters, and high-temperature device characteristics at 300 K-450 K are also made in this work.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 9 )