By Topic

Effects of impurity on field emission of carbon nano-tubes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Haitao Zhao ; Electrical and Computer Engineering, Auburn University, Auburn, Alabama, 36849, USA ; Hulya Kirkici

Carbon nanotubes (CNTs) have been considered as prima candidates as cold-cathode electron emitters for years due to the excellent field emission characteristics they exhibit in vacuum. This high field emission of electrons is mostly contributed due to the large aspect ratio and small radius of tip curvature of each CNT coupled with the highly conductive graphitic walls. On the other hand, the quality of carbon nanotubes is greatly dependent on the deposition conditions. Impurities may exist and affect the performance of CNTs. As a result, there is a need to study the impurity effects of CNTs on the field emission. In this work, we present the effects of impurities on the field emission characteristics of the random multi-walled-CNTs (RMW-CNT) grown in-house. The CNT samples were grown under different growth conditions with thermal chemical vapor deposition (CVD) method. Impurity ratios were determined from the SEM images and ranged from 0 to 100 percent. Field emission measurements of CNTs were carried out at room temperature in vacuum (pressure of 10-6 Torr). The turn-on field, the saturation current density, and the Fowler-Nordheim plots of each sample were analyzed based on field emission results. Influences of impurity ratios on these properties were investigated.

Published in:

2010 IEEE International Power Modulator and High Voltage Conference

Date of Conference:

23-27 May 2010