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Low Dark-Current Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector

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4 Author(s)
Abbaszadeh, S. ; Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada ; Allec, N. ; Kai Wang ; Karim, K.S.

We report a lateral amorphous-selenium (a-Se) metal-semiconductor-metal detector with a blocking contact. The blocking contact, a polyimide layer, is shown to significantly reduce the dark current even at high applied biases that result in high photo-current-to-dark-current ratios, thus leading to wide dynamic range and high signal-to-noise ratio. The use of the polyimide blocking contact prevents the injection of both holes and electrons and improves considerably upon the high dark current of previously reported lateral a-Se detectors. The proposed detector demonstrates the feasibility of low-cost lateral a-Se devices for indirect conversion digital X-ray imaging applications such as chest radiography, fluoroscopy, and computed tomography.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )

Date of Publication:

Sept. 2011

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